BSC160N10NS3GATMA1 Infineon Technologies
Артикул
BSC160N10NS3GATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 8.8A/42A TDSON, N-Channel 100 V 8.8A (Ta), 42A (Tc) 60W (Tc) Surface Mount PG-TDSON-8-1
Цена
245 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSC160N10NS3GATMA1.jpg
Other Names
BSC160N10NS3 G-ND,BSC160N10NS3 G,BSC160N10NS3 GINDKR-ND,SP000482382,BSC160N10NS3GATMA1DKR,BSC160N10NS3GATMA1CT,BSC160N10NS3 GINDKR,BSC160N10NS3G,BSC160N10NS3GATMA1DKR-NDTR-ND,BSC160N10NS3 GINTR-ND,BSC160N10NS3 GINCT-ND,BSC160N10NS3 GINCT,BSC160N10NS3GATMA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
60W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
8.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs
16mOhm @ 33A, 10V
Vgs(th) (Max) @ Id
3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 50 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Base Product Number
BSC160
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8-1
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
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