BSC265N10LSFGATMA1 Infineon Technologies
Артикул
BSC265N10LSFGATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 6.5A/40A TDSON, N-Channel 100 V 6.5A (Ta), 40A (Tc) 78W (Tc) Surface Mount PG-TDSON-8-1
Цена
214 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSC265N10LSFGATMA1.jpg
Other Names
SP000379618,BSC265N10LSFGATMA1TR,BSC265N10LSFGATMA1CT,BSC265N10LSFGATMA1DKR,BSC265N10LSF G-ND,BSC265N10LSF G
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
78W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
6.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs
26.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.4V @ 43µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1600 pF @ 50 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
BSC265
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerTDFN
Supplier Device Package
PG-TDSON-8-1
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
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