BSO613SPVGHUMA1 Infineon Technologies
Артикул
BSO613SPVGHUMA1
Бренд
Infineon Technologies
Описание
MOSFET P-CH 60V 3.44A 8DSO, P-Channel 60 V 3.44A (Ta) 2.5W (Ta) Surface Mount PG-DSO-8
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSO613SPVGHUMA1.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.5W (Ta)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
3.44A (Ta)
Rds On (Max) @ Id, Vgs
130mOhm @ 3.44A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
875 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
BSO613SPVGHUMA1CT,BSO613SPV GDKR,BSO613SPV GCT,BSO613SPV GCT-ND,BSO613SPV GDKR-ND,BSO613SPV GTR-ND,BSO613SPVGXT,BSO613SPVGHUMA1DKR,BSO613SPV G,BSO613SPVG,SP000216309,BSO613SPVGHUMA1TR,BSO613SPV G-ND,BSO613SPVGT
Mounting Type
Surface Mount
Series
SIPMOS®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
PG-DSO-8
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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