BSS209PW Infineon Technologies
Артикул
BSS209PW
Бренд
Infineon Technologies
Описание
MOSFET P-CH 20V 580MA SOT323-3, P-Channel 20 V 580mA (Ta) 520mW (Ta) Surface Mount SOT-323
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSS209PW.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
520mW (Ta)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
580mA (Ta)
Rds On (Max) @ Id, Vgs
550mOhm @ 580mA, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 3.5µA
Gate Charge (Qg) (Max) @ Vgs
1.38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
89.9 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Other Names
BSS209PWINCT-NDR,BSS209PWXTINTR-ND,SP000013478,BSS209PWXT,BSS209PWXTINCT,BSS209PWINTR,BSS209PWINTR-NDR,BSS209PWXTINTR,BSS209PWXTINCT-ND,BSS209PWINCT
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SC-70, SOT-323
Supplier Device Package
SOT-323
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Standard Package
3,000
Vgs (Max)
±12V
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