BSZ0803LSATMA1 Infineon Technologies
Артикул
BSZ0803LSATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 9A/40A TSDSON, N-Channel 100 V 9A (Ta), 40A (Tc) 2.1W (Ta), 52W (Tc) Surface Mount PG-TDSON-8 FL
Цена
200 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSZ0803LSATMA1.jpg
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs
14.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.3V @ 23µA
Vgs (Max)
±20V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 52W (Tc)
Drain to Source Voltage (Vdss)
100 V
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 50 V
Supplier Device Package
PG-TDSON-8 FL
Package / Case
8-PowerTDFN
Standard Package
5,000
Series
OptiMOS™ 5
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Base Product Number
BSZ0803
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-BSZ0803LSATMA1TR,448-BSZ0803LSATMA1CT,SP001614108,448-BSZ0803LSATMA1DKR
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
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