BSZ110N06NS3GATMA1 Infineon Technologies
Артикул
BSZ110N06NS3GATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 60V 20A 8TSDSON, N-Channel 60 V 20A (Tc) 2.1W (Ta), 50W (Tc) Surface Mount PG-TSDSON-8
Цена
174 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BSZ110N06NS3GATMA1.jpg
Other Names
BSZ110N06NS3 GDKR-ND,SP000453676,BSZ110N06NS3 G,BSZ110N06NS3GATMA1TR,BSZ110N06NS3GINTR,2156-BSZ110N06NS3GATMA1,BSZ110N06NS3GINTR-ND,BSZ110N06NS3GATMA1DKR,BSZ110N06NS3G,BSZ110N06NS3GATMA1CT,BSZ110N06NS3GINDKR-ND,BSZ110N06NS3GINCT,BSZ110N06NS3GINCT-ND,BSZ11
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2.1W (Ta), 50W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
20A (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 23µA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 30 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
BSZ110
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerVDFN
Supplier Device Package
PG-TSDSON-8
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
5,000
Vgs (Max)
±20V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут