BUZ30AH3045AATMA1 Infineon Technologies
Артикул
BUZ30AH3045AATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 21A D2PAK, N-Channel 200 V 21A (Tc) 125W (Tc) Surface Mount PG-TO263-3
Цена
119 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/BUZ30AH3045AATMA1.jpg
Other Names
BUZ30AL3045AINTR-ND,BUZ30AH3045AATMA1CT,BUZ30AL3045AINDKR-ND,BUZ30AH3045AINCT-ND,BUZ30AL3045AINCT-ND,BUZ30A H3045A,BUZ30AH3045AINTR-ND,BUZ30AL3045AINTR,INFINFBUZ30AH3045AATMA1,BUZ30AH3045AINTR,BUZ30AH3045AATMA1DKR,BUZ30AH3045AINDKR-ND,2156-BUZ30AH3045AATM
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
125W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
21A (Tc)
Rds On (Max) @ Id, Vgs
130mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Standard Package
1,000
Series
SIPMOS®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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