IPA60R800CEXKSA1 Infineon Technologies
Артикул
IPA60R800CEXKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 5.6A TO220-FP, N-Channel 600 V 5.6A (Tc) 27W (Tc) Through Hole PG-TO220-FP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPA60R800CEXKSA1.jpg
Power Dissipation (Max)
27W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
5.6A (Tc)
Rds On (Max) @ Id, Vgs
800mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs
17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
373 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Technology
MOSFET (Metal Oxide)
Other Names
2156-IPA60R800CEXKSA1-IT,INFINFIPA60R800CEXKSA1,SP001276046
Mounting Type
Through Hole
Series
CoolMOS™ CE
Package
Tube
Part Status
Obsolete
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
TO-220-3 Full Pack
Supplier Device Package
PG-TO220-FP
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
500
Vgs (Max)
±20V
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