IPAW60R180P7SXKSA1 Infineon Technologies
Артикул
IPAW60R180P7SXKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CHANNEL 650V 18A TO220, N-Channel 650 V 18A (Tc) 26W (Tc) Through Hole PG-TO220 Full Pack
Цена
367 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPAW60R180P7SXKSA1.jpg
Other Names
SP001606072
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
26W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Rds On (Max) @ Id, Vgs
180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1081 pF @ 400 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPAW60
Mounting Type
Through Hole
Series
CoolMOS™ P7
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3 Full Pack
Supplier Device Package
PG-TO220 Full Pack
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
45
Vgs (Max)
±20V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут