IPB015N04LGATMA1 Infineon Technologies
Артикул
IPB015N04LGATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 40V 120A D2PAK, N-Channel 40 V 120A (Tc) 250W (Tc) Surface Mount PG-TO263-3
Цена
834 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB015N04LGATMA1.jpg
Other Names
IPB015N04L GTR,IPB015N04L GDKR-ND,IPB015N04L G,IPB015N04L GDKR,IPB015N04LGATMA1TR,IPB015N04LGATMA1DKR,IPB015N04L GCT,IPB015N04L G-ND,SP000387948,IPB015N04L GTR-ND,IPB015N04L GCT-ND,IPB015N04LGATMA1CT,IPB015N04LG
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
250W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
1.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
346 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
28000 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IPB015
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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