IPB160N04S4H1ATMA1 Infineon Technologies
Артикул
IPB160N04S4H1ATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 40V 160A TO263-7, N-Channel 40 V 160A (Tc) 167W (Tc) Surface Mount PG-TO263-7-3
Цена
494 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB160N04S4H1ATMA1.jpg
Other Names
IFEINFIPB160N04S4H1ATMA1,IPB160N04S4H1ATMA1DKR,IPB160N04S4H1ATMA1TR,IPB160N04S4H1ATMA1CT,2156-IPB160N04S4H1ATMA1,SP000711252
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
167W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
160A (Tc)
Rds On (Max) @ Id, Vgs
1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 110µA
Gate Charge (Qg) (Max) @ Vgs
137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
10920 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPB160
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-7, D?Pak (6 Leads + Tab)
Supplier Device Package
PG-TO263-7-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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