IPB200N25N3GATMA1 Infineon Technologies
Артикул
IPB200N25N3GATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 250V 64A D2PAK, N-Channel 250 V 64A (Tc) 300W (Tc) Surface Mount PG-TO263-3
Цена
1 404 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB200N25N3GATMA1.jpg
Other Names
IPB200N25N3GATMA1TR,IPB200N25N3 G,IPB200N25N3 GDKR-ND,IPB200N25N3 GDKR,IPB200N25N3 GTR-ND,SP000677896,IPB200N25N3 GCT-ND,IPB200N25N3G,IPB200N25N3 GCT,IPB200N25N3GATMA1CT,IPB200N25N3 G-ND,IPB200N25N3GATMA1DKR,IPB200N25N3 GTR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
250 V
Current - Continuous Drain (Id) @ 25°C
64A (Tc)
Rds On (Max) @ Id, Vgs
20mOhm @ 64A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
7100 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPB200
Mounting Type
Surface Mount
Series
OptiMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
1,000
Vgs (Max)
±20V
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