IPB80N06S2L-H5 Infineon Technologies
Артикул
IPB80N06S2L-H5
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 80A TO263-3, N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPB80N06S2L-H5.jpg
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
5000 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Standard Package
1,000
Series
OptiMOS™
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
PG-TO263-3-2
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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