IPD50P04P4L11ATMA2 Infineon Technologies
Артикул
IPD50P04P4L11ATMA2
Бренд
Infineon Technologies
Описание
MOSFET P-CH 40V 50A TO252-3, P-Channel 40 V 50A (Tc) 58W (Tc) Surface Mount PG-TO252-3-313
Цена
239 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD50P04P4L11ATMA2.jpg
Supplier Device Package
PG-TO252-3-313
FET Type
P-Channel
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs
59 nC @ 10 V
Vgs (Max)
+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds
3900 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Standard Package
2,500
Series
OptiMOS®-P2
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IPD50P04
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
448-IPD50P04P4L11ATMA2CT,448-IPD50P04P4L11ATMA2TR,SP002325766,448-IPD50P04P4L11ATMA2DKR
Power Dissipation (Max)
58W (Tc)
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