IPD60R1K0CEATMA1 Infineon Technologies
Артикул
IPD60R1K0CEATMA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 4.3A TO252-3, N-Channel 600 V 4.3A (Tc) 37W (Tc) Surface Mount PG-TO252-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD60R1K0CEATMA1.jpg
Power Dissipation (Max)
37W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Rds On (Max) @ Id, Vgs
1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
280 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Technology
MOSFET (Metal Oxide)
Other Names
IPD60R1K0CEATMA1TR,INFINFIPD60R1K0CEATMA1,IPD60R1K0CEATMA1CT,SP001276032,2156-IPD60R1K0CEATMA1-ITTR-ND,IPD60R1K0CEATMA1DKR,2156-IPD60R1K0CEATMA1
Mounting Type
Surface Mount
Series
CoolMOS™ CE
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Operating Temperature
-40°C ~ 150°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
Moisture Sensitivity Level (MSL)
3 (168 Hours)
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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