IPD60R1K4C6 Infineon Technologies
Артикул
IPD60R1K4C6
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 3.2A TO252-3, N-Channel 600 V 3.2A (Tc) 28.4W (Tc) Surface Mount PG-TO252-3
Цена
1 569 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPD60R1K4C6.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
28.4W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
3.2A (Tc)
Rds On (Max) @ Id, Vgs
1.4Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id
3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs
9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 100 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
SP000799134,IPD60R1K4C6BTMA1,IPD60R1K4C6CT,IPD60R1K4C6DKR,IPD60R1K4C6TR
Mounting Type
Surface Mount
Standard Package
2,500
Series
CoolMOS™
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Discontinued at Digi-Key
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
PG-TO252-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут