IPI80CN10N G Infineon Technologies
Артикул
IPI80CN10N G
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 13A TO262-3, N-Channel 100 V 13A (Tc) 31W (Tc) Through Hole PG-TO262-3
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPI80CN10N-G.jpg
Supplier Device Package
PG-TO262-3
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
80mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 12µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
716 pF @ 50 V
FET Feature
-
Package / Case
TO-262-3 Long Leads, I?Pak, TO-262AA
Technology
MOSFET (Metal Oxide)
Series
OptiMOS™
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPI80CN10N G-ND,IPI80CN10NG,SP000208938,SP000680758
Standard Package
500
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
31W (Tc)
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