IPP50N10S3L16AKSA1 Infineon Technologies
Артикул
IPP50N10S3L16AKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 50A TO220-3, N-Channel 100 V 50A (Tc) 100W (Tc) Through Hole PG-TO220-3-1
Цена
129 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP50N10S3L16AKSA1.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
100W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Rds On (Max) @ Id, Vgs
15.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs
64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4180 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
IFEINFIPP50N10S3L16AKSA1,2156-IPP50N10S3L16AKSA1,IPP50N10S3L16,IPP50N10S3L-16,SP000407118,IPP50N10S3L-16-ND
Mounting Type
Through Hole
Standard Package
500
Series
OptiMOS™
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3-1
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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