IPP60R070CFD7XKSA1 Infineon Technologies
Артикул
IPP60R070CFD7XKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 650V 31A TO220-3, N-Channel 650 V 31A (Tc) 156W (Tc) Through Hole PG-TO220-3
Цена
1 350 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP60R070CFD7XKSA1.jpg
Other Names
IPP60R070CFD7,SP001617976
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
156W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
31A (Tc)
Rds On (Max) @ Id, Vgs
70mOhm @ 15.1A, 10V
Vgs(th) (Max) @ Id
4.5V @ 760µA
Gate Charge (Qg) (Max) @ Vgs
67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2721 pF @ 400 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPP60R070
Mounting Type
Through Hole
Series
CoolMOS™ CFD7
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
50
Vgs (Max)
±20V
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