IPP60R099C7XKSA1 Infineon Technologies
Артикул
IPP60R099C7XKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 600V 22A TO220-3, N-Channel 600 V 22A (Tc) 110W (Tc) Through Hole PG-TO220-3-1
Цена
1 197 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP60R099C7XKSA1.jpg
Other Names
SP001298000
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
110W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Rds On (Max) @ Id, Vgs
99mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id
4V @ 490µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1819 pF @ 400 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IPP60R099
Mounting Type
Through Hole
Series
CoolMOS™ C7
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3-1
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
2,500
Vgs (Max)
±20V
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