IPP60R180C7XKSA1 Infineon Technologies
Артикул
IPP60R180C7XKSA1
Бренд
Infineon Technologies
Описание
IPP60R180 - 13A, 600V, N-CHANEL, N-Channel 600 V 13A (Tc) 68W (Tc) Through Hole PG-TO220-3-1
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP60R180C7XKSA1.jpg
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id
4V @ 260µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1080 pF @ 400 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-TO220-3-1
Series
CoolMOS™ C7
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Unaffected
Other Names
2156-IPP60R180C7XKSA1-448
Standard Package
1
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Power Dissipation (Max)
68W (Tc)
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