IPP80N08S2L07AKSA1 Infineon Technologies
Артикул
IPP80N08S2L07AKSA1
Бренд
Infineon Technologies
Описание
MOSFET N-CH 75V 80A TO220-3, N-Channel 75 V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
Цена
704 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPP80N08S2L07AKSA1.jpg
Package / Case
TO-220-3
Supplier Device Package
PG-TO220-3-1
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
75 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
7.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
233 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5400 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
OptiMOS™
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IPP80N08S2L07,SP000219050,IPP80N08S2L-07,IPP80N08S2L-07-ND,IFEINFIPP80N08S2L07AKSA1,2156-IPP80N08S2L07AKSA1
Standard Package
50
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IPP80N08
Power Dissipation (Max)
300W (Tc)
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