IPW60R017C7XKSA1 Infineon Technologies
Артикул
IPW60R017C7XKSA1
Бренд
Infineon Technologies
Описание
HIGH POWER_NEW, N-Channel 600 V 109A (Tc) 446W (Tc) Through Hole PG-TO247-3-41
Цена
4 475 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IPW60R017C7XKSA1.jpg
Package / Case
TO-247-3
Supplier Device Package
PG-TO247-3-41
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
600 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
17mOhm @ 58.2A, 10V
Vgs(th) (Max) @ Id
4V @ 2.91mA
Gate Charge (Qg) (Max) @ Vgs
240 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9890 pF @ 400 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
CoolMOS™
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
109A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001313542
Standard Package
30
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IPW60R017
Power Dissipation (Max)
446W (Tc)
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