IRF100B202 Infineon Technologies
Артикул
IRF100B202
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 97A TO220AB, N-Channel 100 V 97A (Tc) 221W (Tc) Through Hole TO-220AB
Цена
319 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF100B202.jpg
Other Names
SP001561488
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
221W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
97A (Tc)
Rds On (Max) @ Id, Vgs
8.6mOhm @ 58A, 10V
Vgs(th) (Max) @ Id
4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4476 pF @ 50 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IRF100
Mounting Type
Through Hole
Series
HEXFET®, StrongIRFET™
Package
Tube
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-220-3
Supplier Device Package
TO-220AB
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
100
Vgs (Max)
±20V
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