IRF200P222 Infineon Technologies
Артикул
IRF200P222
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 182A TO247AC, N-Channel 200 V 182A (Tc) 556W (Tc) Through Hole TO-247AC
Цена
1 691 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF200P222.jpg
Package / Case
TO-247-3
Supplier Device Package
TO-247AC
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6.6mOhm @ 82A, 10V
Vgs(th) (Max) @ Id
4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs
203 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9820 pF @ 50 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
StrongIRFET™
Package
Tube
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
182A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001582092
Standard Package
25
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Base Product Number
IRF200
Power Dissipation (Max)
556W (Tc)
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