IRF3205L Infineon Technologies
Артикул
IRF3205L
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 110A TO262, N-Channel 55 V 110A (Tc) 200W (Tc) Through Hole TO-262
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF3205L.jpg
Supplier Device Package
TO-262
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8mOhm @ 62A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
146 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3247 pF @ 25 V
FET Feature
-
Package / Case
TO-262-3 Long Leads, I?Pak, TO-262AA
Technology
MOSFET (Metal Oxide)
RoHS Status
RoHS non-compliant
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
*IRF3205L
Standard Package
50
Mounting Type
Through Hole
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
200W (Tc)
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