IRF5210STRRPBF Infineon Technologies
Артикул
IRF5210STRRPBF
Бренд
Infineon Technologies
Описание
MOSFET P-CH 100V 38A D2PAK, P-Channel 100 V 38A (Tc) 3.1W (Ta), 170W (Tc) Surface Mount D2PAK
Цена
524 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF5210STRRPBF.jpg
Package / Case
TO-263-3, D?Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
D2PAK
REACH Status
REACH Unaffected
FET Type
P-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2780 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Not For New Designs
Current - Continuous Drain (Id) @ 25°C
38A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001561786,448-IRF5210STRRPBFTR,448-IRF5210STRRPBFCT,448-IRF5210STRRPBFDKR,IRF5210STRRPBF-ND
Standard Package
800
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IRF5210
Power Dissipation (Max)
3.1W (Ta), 170W (Tc)
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