IRF5802TRPBF Infineon Technologies
Артикул
IRF5802TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 150V 900MA MICRO6, N-Channel 150 V 900mA (Ta) 2W (Ta) Surface Mount Micro6™(TSOP-6)
Цена
119 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF5802TRPBF.jpg
Other Names
IRF5802TRPBFTR,IRF5802TRPBF-ND,IRF5802TRPBFCT,SP001561828,IRF5802TRPBFDKR
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
2W (Ta)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
900mA (Ta)
Rds On (Max) @ Id, Vgs
1.2Ohm @ 540mA, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
88 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IRF5802
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
SOT-23-6 Thin, TSOT-23-6
Supplier Device Package
Micro6™(TSOP-6)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
3,000
Vgs (Max)
±30V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут