IRF6613TRPBF Infineon Technologies
Артикул
IRF6613TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 40V 23A DIRECTFET, N-Channel 40 V 23A (Ta), 150A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT
Цена
427 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6613TRPBF.jpg
Package / Case
DirectFET™ Isometric MT
Supplier Device Package
DIRECTFET™ MT
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.4mOhm @ 23A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
63 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5950 pF @ 15 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 150A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001526876,IRF6613TRPBFCT,IRF6613TRPBFDKR,IRF6613TRPBFTR
Standard Package
4,800
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Base Product Number
IRF6613
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
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