IRF6614TRPBF Infineon Technologies
Артикул
IRF6614TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 40V 12.7A DIRECTFET, N-Channel 40 V 12.7A (Ta), 55A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ ST
Цена
517 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6614TRPBF.jpg
Package / Case
DirectFET™ Isometric ST
Supplier Device Package
DIRECTFET™ ST
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
40 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.3mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2560 pF @ 20 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
12.7A (Ta), 55A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001527924,IRF6614TRPBFDKR,IRF6614TRPBFCT,IRF6614TRPBFTR
Standard Package
4,800
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Base Product Number
IRF6614
Power Dissipation (Max)
2.1W (Ta), 42W (Tc)
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