IRF6811STRPBF Infineon Technologies
Артикул
IRF6811STRPBF
Бренд
Infineon Technologies
Описание
MOSFET N CH 25V 19A DIRECTFET, N-Channel 25 V 19A (Ta), 74A (Tc) 2.1W (Ta), 32W (Tc) Surface Mount DIRECTFET™ SQ
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF6811STRPBF.jpg
Supplier Device Package
DIRECTFET™ SQ
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
25 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.7mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1590 pF @ 13 V
FET Feature
-
Package / Case
DirectFET™ Isometric SQ
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Obsolete
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 74A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF6811STRPBF-ND,IRF6811STRPBFTR,SP001530224,IRF6811STRPBFCT,IRF6811STRPBFDKR
Standard Package
4,800
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Power Dissipation (Max)
2.1W (Ta), 32W (Tc)
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