IRF7379 Infineon Technologies
Артикул
IRF7379
Бренд
Infineon Technologies
Описание
MOSFET N/P-CH 30V 8-SOIC, Mosfet Array N and P-Channel 30V 5.8A, 4.3A 2.5W Surface Mount 8-SO
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/IRF7379.jpg
Mounting Type
Surface Mount
Other Names
*IRF7379
Power - Max
2.5W
FET Type
N and P-Channel
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
5.8A, 4.3A
Rds On (Max) @ Id, Vgs
45mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
520pF @ 25V
Standard Package
95
HTSUS
8541.29.0095
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
FET Feature
Standard
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