IRF7526D1 Infineon Technologies
Артикул
IRF7526D1
Бренд
Infineon Technologies
Описание
MOSFET P-CH 30V 2A MICRO8, P-Channel 30 V 2A (Ta) 1.25W (Ta) Surface Mount Micro8™
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7526D1.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.25W (Ta)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Rds On (Max) @ Id, Vgs
200mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 25 V
FET Feature
Schottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Surface Mount
Standard Package
95
Series
FETKY™
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package
Micro8™
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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