IRF7702TR Infineon Technologies
Артикул
IRF7702TR
Бренд
Infineon Technologies
Описание
MOSFET P-CH 12V 8A 8TSSOP, P-Channel 12 V 8A (Tc) 1.5W (Tc) Surface Mount 8-TSSOP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7702TR.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.5W (Tc)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Rds On (Max) @ Id, Vgs
14mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
81 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
3470 pF @ 10 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Mounting Type
Surface Mount
Standard Package
4,000
Series
HEXFET®
Package
Tape & Reel (TR)
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
8-TSSOP
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±8V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут