IRF7705 Infineon Technologies
Артикул
IRF7705
Бренд
Infineon Technologies
Описание
MOSFET P-CH 30V 8A 8TSSOP, P-Channel 30 V 8A (Tc) 1.5W (Tc) Surface Mount 8-TSSOP
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7705.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
1.5W (Tc)
FET Type
P-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Rds On (Max) @ Id, Vgs
18mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
2774 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Other Names
*IRF7705
Mounting Type
Surface Mount
Standard Package
95
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package
8-TSSOP
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±20V
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