IRF7853TRPBF Infineon Technologies
Артикул
IRF7853TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 8.3A 8SO, N-Channel 100 V 8.3A (Ta) 2.5W (Ta) Surface Mount 8-SO
Цена
250 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRF7853TRPBF.jpg
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
18mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id
4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
39 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1640 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
8.3A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF7853TRPBFDKR,SP001554438,IRF7853TRPBF-ND,IRF7853TRPBFCT,IRF7853TRPBFTR
Standard Package
4,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IRF7853
Power Dissipation (Max)
2.5W (Ta)
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