IRF7910PBF Infineon Technologies
Артикул
IRF7910PBF
Бренд
Infineon Technologies
Описание
MOSFET 2N-CH 12V 10A 8-SOIC, Mosfet Array 2 N-Channel (Dual) 12V 10A 2W Surface Mount 8-SO
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/IRF7910PBF.jpg
Base Product Number
IRF7910PBF
Other Names
SP001560068
Power - Max
2W
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
12V
Current - Continuous Drain (Id) @ 25°C
10A
Rds On (Max) @ Id, Vgs
15mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
26nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
1730pF @ 6V
Mounting Type
Surface Mount
Standard Package
3,800
HTSUS
8541.29.0095
Series
HEXFET®
Package
Tube
Part Status
Discontinued at Digi-Key
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
FET Feature
Logic Level Gate
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут