IRF8313TRPBF Infineon Technologies
Артикул
IRF8313TRPBF
Бренд
Infineon Technologies
Описание
MOSFET 2N-CH 30V 9.7A 8SO, Mosfet Array 2 N-Channel (Dual) 30V 9.7A 2W Surface Mount 8-SO
Цена
148 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Arrays, Транзисторы - Полевые транзисторы (FET MOSFET) - массивы
Image
files/IRF8313TRPBF.jpg
Base Product Number
IRF8313
Other Names
SP001577640,IRF8313TRPBFCT,IRF8313TRPBFDKR,IRF8313TRPBFTR
Power - Max
2W
FET Type
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
9.7A
Rds On (Max) @ Id, Vgs
15.5mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
760pF @ 15V
Mounting Type
Surface Mount
Standard Package
4,000
HTSUS
8541.29.0095
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Not For New Designs
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
FET Feature
Logic Level Gate
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