IRFB38N20DPBF Infineon Technologies
Артикул
IRFB38N20DPBF
Бренд
Infineon Technologies
Описание
IRFB38N20 - 12V-300V N-CHANNEL P, N-Channel 200 V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB
Цена
176 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFB38N20DPBF.jpg
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
54mOhm @ 26A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
91 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2900 pF @ 25 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220AB
Series
HEXFET®
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
Other Names
2156-IRFB38N20DPBF-448
Standard Package
1
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Power Dissipation (Max)
3.8W (Ta), 300W (Tc)
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