IRFH5302TRPBF Infineon Technologies
Артикул
IRFH5302TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 30V 32A/100A PQFN, N-Channel 30 V 32A (Ta), 100A (Tc) 3.6W (Ta), 100W (Tc) Surface Mount PQFN (5x6) Single Die
Цена
210 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFH5302TRPBF.jpg
Other Names
IRFH5302TRPBFDKR,SP001575636,IRFH5302TRPBFCT,IRFH5302TRPBFTR,2156-IRFH5302TRPBF,IRFH5302TRPBF-ND,INFINFIRFH5302TRPBF
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.6W (Ta), 100W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs
2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4400 pF @ 15 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IRFH5302
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 150°C (TJ)
Package / Case
8-PowerVDFN
Supplier Device Package
PQFN (5x6) Single Die
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,000
Vgs (Max)
±20V
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