IRFP3710PBF Infineon Technologies
Артикул
IRFP3710PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 57A TO247AC, N-Channel 100 V 57A (Tc) 200W (Tc) Through Hole TO-247AC
Цена
586 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFP3710PBF.jpg
Other Names
64-6014PBF,64-6014PBF-ND,*IRFP3710PBF,SP001552026
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
200W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
57A (Tc)
Rds On (Max) @ Id, Vgs
25mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3000 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Base Product Number
IRFP3710
Mounting Type
Through Hole
Series
HEXFET®
Package
Bulk
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-247-3
Supplier Device Package
TO-247AC
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
25
Vgs (Max)
±20V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут