IRFR3706PBF Infineon Technologies
Артикул
IRFR3706PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 20V 75A DPAK, N-Channel 20 V 75A (Tc) 88W (Tc) Surface Mount D-Pak
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFR3706PBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
88W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Rds On (Max) @ Id, Vgs
9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
2410 pF @ 10 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.8V, 10V
Other Names
SP001555072
Mounting Type
Surface Mount
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-Pak
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
Vgs (Max)
±12V
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут