IRFR9N20DPBF Infineon Technologies
Артикул
IRFR9N20DPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 9.4A DPAK, N-Channel 200 V 9.4A (Tc) 86W (Tc) Surface Mount D-Pak
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFR9N20DPBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
86W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
9.4A (Tc)
Rds On (Max) @ Id, Vgs
380mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
560 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
SP001565076,2156-IRFR9N20DPBF,INFINFIRFR9N20DPBF,*IRFR9N20DPBF
Mounting Type
Surface Mount
Standard Package
3,000
Series
HEXFET®
Package
Tube
Part Status
Discontinued at Digi-Key
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
D-Pak
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Vgs (Max)
±30V
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