IRFSL3806PBF Infineon Technologies
Артикул
IRFSL3806PBF
Бренд
Infineon Technologies
Описание
IRFSL3806 - 12V-300V N-CHANNEL P, N-Channel 60 V 43A (Tc) 71W (Tc) Through Hole TO-262
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFSL3806PBF.jpg
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1150 pF @ 50 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-262
Series
HEXFET®
Package
Bulk
Part Status
Active
Moisture Sensitivity Level (MSL)
Vendor Undefined
REACH Status
REACH Unaffected
Other Names
2156-IRFSL3806PBF-448
Standard Package
1
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I?Pak, TO-262AA
Power Dissipation (Max)
71W (Tc)
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