IRFU4620PBF Infineon Technologies
Артикул
IRFU4620PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 200V 24A IPAK, N-Channel 200 V 24A (Tc) 144W (Tc) Through Hole IPAK (TO-251AA)
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRFU4620PBF.jpg
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
144W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
24A (Tc)
Rds On (Max) @ Id, Vgs
78mOhm @ 15A, 10V
Vgs(th) (Max) @ Id
5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1710 pF @ 50 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Other Names
SP001573610
Mounting Type
Through Hole
Series
HEXFET®
Package
Tube
Part Status
Obsolete
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
IPAK (TO-251AA)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
75
Vgs (Max)
±20V
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