IRL60HS118 Infineon Technologies
Артикул
IRL60HS118
Бренд
Infineon Technologies
Описание
MOSFET N-CH 60V 18.5A 6PQFN, N-Channel 60 V 18.5A (Tc) 11.5W (Tc) Surface Mount 6-PQFN (2x2)
Цена
184 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRL60HS118.jpg
Other Names
IRL60HS118DKR,IRL60HS118TR,SP001592258,IRL60HS118CT
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
11.5W (Tc)
FET Type
N-Channel
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
18.5A (Tc)
Rds On (Max) @ Id, Vgs
17mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
2.3V @ 10µA
Gate Charge (Qg) (Max) @ Vgs
8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
660 pF @ 25 V
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Base Product Number
IRL60HS118
Mounting Type
Surface Mount
Series
-
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Operating Temperature
-55°C ~ 175°C (TJ)
Package / Case
6-VDFN Exposed Pad
Supplier Device Package
6-PQFN (2x2)
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Standard Package
4,000
Vgs (Max)
±20V
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