IRLL2705PBF Infineon Technologies
Артикул
IRLL2705PBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 55V 3.8A SOT223, N-Channel 55 V 3.8A (Ta) 1W (Ta) Surface Mount SOT-223
Цена
53 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLL2705PBF.jpg
Supplier Device Package
SOT-223
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
55 V
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Rds On (Max) @ Id, Vgs
40mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
870 pF @ 25 V
FET Feature
-
Package / Case
TO-261-4, TO-261AA
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tube
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
3.8A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IFEINFIRLL2705PBF,2156-IRLL2705PBF-IT,SP001558810
Standard Package
1,760
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
1W (Ta)
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