IRLML2502GTRPBF Infineon Technologies
Артикул
IRLML2502GTRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 20V 4.2A SOT23, N-Channel 20 V 4.2A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23
Цена
74 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLML2502GTRPBF.jpg
Supplier Device Package
Micro3™/SOT-23
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
45mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 15 V
FET Feature
-
Package / Case
TO-236-3, SC-59, SOT-23-3
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001558826,IRLML2502GTRPBFDKR,IRLML2502GTRPBFTR,IRLML2502GTRPBFCT
Standard Package
3,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Power Dissipation (Max)
1.25W (Ta)
Узнайте актуальную цену на данный товар
Оставьте Ваши контактные данные и наш менеджер ответит вам в течение 15 минут