IRLML2502TRPBF Infineon Technologies
Артикул
IRLML2502TRPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 20V 4.2A SOT23, N-Channel 20 V 4.2A (Ta) 1.25W (Ta) Surface Mount Micro3™/SOT-23
Цена
98 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLML2502TRPBF.jpg
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
Micro3™/SOT-23
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
20 V
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
45mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 15 V
FET Feature
-
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part Status
Active
Current - Continuous Drain (Id) @ 25°C
4.2A (Ta)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRLML2502PBFTR-ND,IRLML2502PBFTR,IRLML2502TRPBFTR,IRLML2502PBFDKR,IRLML2502PBFDKR-ND,IRLML2502TRPBFDKR,*IRLML2502TRPBF,IRLML2502PBFCT,IRLML2502TRPBFCT,SP001558336,IRLML2502PBFCT-ND
Standard Package
3,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Base Product Number
IRLML2502
Power Dissipation (Max)
1.25W (Ta)
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