IRLS4030-7PPBF Infineon Technologies
Артикул
IRLS4030-7PPBF
Бренд
Infineon Technologies
Описание
MOSFET N-CH 100V 190A D2PAK, N-Channel 100 V 190A (Tc) 370W (Tc) Surface Mount D2PAK (7-Lead)
Цена
868 руб.
Теги
Discrete Semiconductor Products, Дискретные полупроводниковые приборы, Transistors - FETs, MOSFETs - Single, Транзисторы - FETs, MOSFETs - одиночные
Image
files/IRLS4030-7PPBF.jpg
Supplier Device Package
D2PAK (7-Lead)
REACH Status
REACH Unaffected
FET Type
N-Channel
Drain to Source Voltage (Vdss)
100 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 110A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
11490 pF @ 50 V
FET Feature
-
Package / Case
TO-263-7, D?Pak (6 Leads + Tab), TO-263CB
Technology
MOSFET (Metal Oxide)
RoHS Status
ROHS3 Compliant
Series
HEXFET®
Package
Tube
Part Status
Discontinued at Digi-Key
Current - Continuous Drain (Id) @ 25°C
190A (Tc)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001568682,IRLS40307PPBF
Standard Package
3,000
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Power Dissipation (Max)
370W (Tc)
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